Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

被引：44

作者：

Lei, M. ^{[1
,2
]}

Yang, H. ^{[2
]}

Li, P. G. ^{[1
]}

Tang, W. H. ^{[1
]}

机构：

[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Dev, Dept Phys, Hangzhou 310018, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 459卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

AlN; nanowires; direct nitridation process;

D O I：

10.1016/j.jallcom.2007.04.265

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AIN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AIN nanowires. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：338 / 342

页数：5

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