Field electron emission properties of the carbon nanotube emitter device produced through radio-frequency plasma-enhanced chemical vapor deposition at low temperature

被引：0

作者：

Migita, T. ^{[1
]}

Shiratori, Y. ^{[1
]}

Kishino, T. ^{[1
]}

Takeuchi, Y. ^{[1
]}

机构：

[1] Int Ctr Mat Res, Kawasaki Ku, Kanagawa 2100855, Japan

来源：

PROCEEDINGS OF THE TWENTY-FIFTH INTERNATIONAL DISPLAY RESEARCH CONFERENCE - EURODISPLAY 2005 | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon nanotube (CNT)-field emission display (FED) is believed to be next generation of FEDs due to excellent field emission characters of CNTs. We produced a CNT-cathode device with micron-sized gate holes for FED-application by using dc-biased radio frequency plasma enhanced chemical vapor deposition at low temperature applicable to glass substrates. Field electron emission properties and their dependence on the CNT emitter height characteristics are reported.

引用

页码：372 / 375

页数：4

共 13 条

[1] Fabrication and field emission characteristics of high density carbon nanotube microarrays [J].