Electric-field control of interfacial in-plane magnetic anisotropy in CoFeB/MgO junctions

被引：24

作者：

Deka, Angshuman ^{[1
]}

Rana, Bivas ^{[2
]}

Anami, Ryo ^{[1
]}

Miura, Katsuya ^{[3
]}

Takahashi, Hiromasa ^{[3
]}

Otani, YoshiChika ^{[2
,4
]}

Fukuma, Yasuhiro ^{[1
,2
]}

机构：

[1] Kyushu Inst Technol, Dept Comp Sci & Elect, 680-4 Kawazu, Iizuka, Fukuoka 8208502, Japan

[2] RIKEN, Ctr Emergent Matter Sci, 2-1 Hirosawa, Wako, Saitama 3510198, Japan

[3] Hitachi Ltd, Res & Dev Grp, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan

[4] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

PHYSICAL REVIEW B | 2020年 / 101卷 / 17期

关键词：

MAGNETOCRYSTALLINE ANISOTROPY; ROOM-TEMPERATURE; ATOMIC LAYERS; MAGNETORESISTANCE;

D O I：

10.1103/PhysRevB.101.174405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetoelectric coupling in metal/oxide heterostructures has opened up the possibility of controlling magnetization by voltage, i.e., electric field. However, the electric-field excitation of magnetization dynamics in perfectly in-plane and out-of-plane magnetized films have not been demonstrated so far due to zero electric-field torque originating from voltage control of perpendicular magnetic anisotropy. This limits the application of voltage-controlled magnetic anisotropy in magnetic field free control of magnetization dynamics. Here we show that magnetic annealing can induce an interfacial in-plane magnetic anisotropy of CoFeB/MgO junctions, thereby controlling the symmetry of interfacial magnetic anisotropy. The magnetic anisotropy is modulated by applying voltage: a negative bias voltage increases perpendicular magnetic anisotropy, while a positive bias voltage decreases perpendicular magnetic anisotropy and increases the in-plane magnetic anisotropy. Such a control of symmetry of the interfacial magnetic anisotropy by magnetic annealing and its tunability by electric fields is useful for developing purely voltage-controlled spintronic devices.

引用

页数：8