Influence of annealed ITO on PLD CZTS thin film solar cell

被引:17
作者
Liang, Guang-Xing [1 ]
Luo, Yan-Di [1 ]
Hu, Ju-Guang [1 ]
Chen, Xing-Ye [1 ]
Zeng, Yang [1 ]
Su, Zheng-Hua [1 ]
Luo, Jing-Ting [1 ]
Fan, Ping [1 ]
机构
[1] Shenzhen Univ, Shenzhen Key Lab Adv Thin Films & Applicat, Coll Phys & Energy, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
CZTS; Thin film; Solar cell; ITO; PLD;
D O I
10.1016/j.surfcoat.2018.11.079
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, the influence of annealed ITO thin film as a transparent electrode layer in pulse laser deposition (PLD) Cu2ZnSnS4 (CZTS) thin-film solar cell was investigated. The proposed annealed ITO thin film exhibits a high degree of crystallinity and large and evenly distributed grains. Thus, low resistivity and wide and high transmitted band in the UV/VIS light range with ideal optical band gap of 3.8 eV can be obtained. Devices built with these annealed ITO thin films on our PLD CZTS solar cell exhibit a significant improvement in power conversion efficiency from 0.2% to 1.92%.
引用
收藏
页码:762 / 764
页数:3
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