Electrical spin injection and transport in germanium

被引：158

作者：

Zhou, Yi ^{[1
]}

Han, Wei ^{[2
]}

Chang, Li-Te ^{[1
]}

Xiu, Faxian ^{[1
]}

Wang, Minsheng ^{[1
]}

Oehme, Michael ^{[3
]}

Fischer, Inga A. ^{[3
]}

Schulze, Joerg ^{[3
]}

Kawakami, Roland. K. ^{[2
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[2] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[3] Univ Stuttgart, Inst Halbleitertech IHT, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 12期

关键词：

SPINTRONICS; PRECESSION; SILICON; METAL;

D O I：

10.1103/PhysRevB.84.125323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated.

引用

页数：7

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