Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice

被引：14

作者：

Zhang, Wei ^{[1
]}

Zhang, Yue ^{[1
]}

Xue, JunShuai ^{[1
]}

Zhang, Ying ^{[1
]}

Lv, Ling ^{[1
]}

Zhang, JinCheng ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 16期

基金：

中国国家自然科学基金;

关键词：

aluminium compounds; excited states; gallium compounds; ground states; III-V semiconductors; permittivity; semiconductor doping; semiconductor superlattices; silicon; wide band gap semiconductors; WAVELENGTH;

D O I：

10.1063/1.3655469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN superlattices (SLs) with and without Si doping exhibit very different properties. Because of the difference between the dielectric constants of AlGaN and GaN, the wells of the SL are depleted in the undoped structure. With increased Si doping in the GaN wells, the depletion effect will vanish, and the accumulation of electrons will compensate for the polarization-induced internal electric field (PIIEF) in the AlGaN barrier, which is followed by disturbance of the PIIEF in the GaN wells due to electron overflow from the ground state E-0 to the first excited state E-1. This leads to a decrease in E-1-E-0. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3655469]

引用

页数：3

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