Morphological origin of high mobility in pentacene thin-film transistors

被引：169

作者：

Laquindanum, JG ^{[1
]}

Katz, HE ^{[1
]}

Lovinger, AJ ^{[1
]}

Dodabalapur, A ^{[1
]}

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

来源：

CHEMISTRY OF MATERIALS | 1996年 / 8卷 / 11期

关键词：

D O I：

10.1021/cm9603664

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin-film transistors (TFTs) were fabricated using vacuum deposited pentacene as the semiconductor. Field-effect mobilities as high as 0.4 cm(2) V-1 s(-1) were obtained, which were attributed to the single-crystal nature of the deposited films.

引用

页码：2542 / &

页数：4

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