Control of nano-structure of the initial growth layers of Co-Cr thin films deposited by facing targets sputtering

Sputtering at low gas pressure condition caused a dense structure in sputtered films. Kr was wed as sputtering gas instead of Ar in order to reduce the peening effect of recoiled Ar particles The internal stress of the Co-Cr films deposited at low Kr gas pressure exhibited tensile stress while the film sputter-deposited at Ar gas pressure of 0.1 m Torr exhibited compressive stress. The relationship between c-axis orientation of crystallites and distribution of the perpendicular coer civity H-c perpendicular to in Co-Cr films has been investigated through the evaluation of the H-c perpendicular to of surface layer H-c perpendicular to(s) measured by Kerr hysteresis loop tracer. Better c-axis orientation, higher Cr content and addition of Ta seemed to be essential requirements to get higher H-c perpendicular to of initial growth layer H-c perpendicular to(i) and good uniformity of H-c perpendicular to. Through thickness direction, lower Delta H-c and relatively high H-c perpendicular to(i) caused better recording characteristics and lower media noise level. (C) 1998 Elsevier Science Ltd. All rights reserved.