Epitaxial strain and antiferromagnetism in Heusler Fe2VSi thin films

被引：19

作者：

Fukatani, N. ^{[1
]}

Ueda, K. ^{[1
]}

Asano, H. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 07期

关键词：

MAGNETIC-PROPERTIES; TEMPERATURE; FERROELECTRICITY; TRANSFORMATION; ALLOYS;

D O I：

10.1063/1.3555089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of biaxial strain on the electrical and magnetic properties of an antiferromagnetic Heusler compound Fe2VSi were systematically investigated. A series of epitaxial Fe2VSi thin films on MgAl2O4 and MgO substrates were fabricated with different tensile strains by varying the substrate-lattice mismatch and the film thickness. The strain was characterized by the ratio of the out-of-plane lattice parameter c to the in-plane lattice parameter a; this ratio c/a varied from 0.987 to 0.998 at room temperature. The tensile epitaxial strain was found to increase the antiferromagnetic Neel temperature T-N to 193 K, which is 70 K higher than that for the unstrained bulk material. A clear dependence of T-N on c/a was observed, which is consistent with theoretical predictions in which the band Jahn-Teller effect plays a significant role. (C) 2011 American Institute of Physics. [doi:10.1063/1.3555089]

引用

页数：6

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