The dynamics of excitons and trions in resonant tunneling diodes

被引：4
作者：
Camps, I
Makler, SS
Vercik, A
Gobato, YG
Marques, GE
Brasil, MJSP
机构：
[1] Univ Fed Fluminense, Inst Fis, BR-24210340 Niteroi, RJ, Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13560 Sao Carlos, SP, Brazil
[3] Univ Sao Paulo, Dept Ciencias Bas, Fac Zootecn & Engn Alimentos, Pirassununga, SP, Brazil
[4] Univ Campinas, Inst Fis Gleb Wataghin, Grp Propriedades Opt, Campinas, SP, Brazil
来源：
SOLID STATE COMMUNICATIONS | 2005年 / 135卷 / 04期
基金：
巴西圣保罗研究基金会;
关键词：
excitonic complexes; trions; resonant tunneling; charge buildup;
D O I：
10.1016/j.ssc.2005.04.026
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The aim of this work is to study the dynamic formation and dissociation of trions and excitons in double barrier resonant tunneling diodes. We propose a system of rate equations that takes into account the formation, dissociation and annihilation of these complexes inside the quantum well. From the solutions of the coupled equations, we are able to study the modulation of excitons and trions formation in the device as a function of the applied bias. The results of our model agree qualitatively with the experiments showing the viability of these rate equations system to study the dynamics of complex systems. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：241 / 246
页数：6
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