Magnetic-field-induced delocalization in center-doped GaAs/AlxGa1-xAs multiple quantum wells

被引：45

作者：

Lee, CH ^{[1
]}

Chang, YH

Suen, YW

Lin, HH

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Natl Chung Hsin Univ, Dept Phys, Taichung 400, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.58.10629

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report magnetotransport measurements and scaling analysis on a series of center-doped GaAs quantum wells. Sharp phase transitions were observed in the magnetic field sweep and it was found that, depending on the doping concentration in the quantum wells, the insulating phase can make transitions to quantum Hall phase with Landau-level filling factors (upsilon) of 2, 6, and 8. The critical exponents vary from sample to sample and are mobility dependent. The longitudinal resistivities of these samples at the phase transition points decrease with increasing upsilon, and for a sample with higher mobility, its value is close to h/upsilon e(2). [S0163-1829(98)01839-6].

引用

页码：10629 / 10633

页数：5

共 20 条

[1] SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].