Taming Spatiotemporal Chaos in Forced Memristive Arrays

被引:8
作者
Buscarino, Arturo [1 ]
Corradino, Claudia [1 ]
Fortuna, Luigi [1 ]
Chua, Leon O. [2 ]
机构
[1] Univ Catania, Dipartimento Ingn Elettr Elettron & Informat, I-95125 Catania, Italy
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
关键词
Bifurcations; flux-charge method; memristor; spatiotemporal chaos; VLSI memristive devices; LOGIC OPERATIONS; CIRCUITS; CROSSBAR; DYNAMICS; SYNAPSE; NETWORK; DESIGN;
D O I
10.1109/TVLSI.2018.2833291
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The study on stochastic effects occurring at the nanoscales in VLSI memristive devices is a timely topic which is gaining a growing interest. Indeed, these effects are often linked to the occurrence of nonlinear phenomena, such as spatiotemporal chaos. In this paper, we present evidence that spatiotemporal chaos in VLSI memristive systems can also be tamed by exploiting the unavoidable sources of noise affecting the dynamical behavior of the device. In particular, we aim at investigating this scenario starting from the results observed in several nonlinear oscillators, where the presence of noise facilitates their synchronization. In particular, we focus on the role of noise acting on initial conditions in memristive nonlinear oscillators. In this paper, we focus on a nonautonomous memristive oscillator characterizing its dynamics with respect to the memristor initial conditions and deriving a suitable model in which they appear as further system parameters and exploiting this dependence for the synchronization of an array of coupled nonlinear chaotic memristive oscillators.
引用
收藏
页码:2947 / 2954
页数:8
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