Fabrication of heat-resistant silicon carbide ceramics by controlling intergranular phase

被引:8
作者
Kim, YW [1 ]
Lee, SH
Nishimura, T
Mitomo, M
Lee, JH
Kim, DY
机构
[1] Univ Seoul, Dept Mat Sci & Engn, Seoul 130743, South Korea
[2] Natl Inst Mat Sci, Adv Mat Lab, Ibaraki 3050044, Japan
[3] Seoul Natl Univ, Ctr Microstruct Sci & Mat, Seoul 151744, South Korea
来源
ADVANCED SI-BASED CERAMICS AND COMPOSITES | 2005年 / 287卷
关键词
silicon carbide; high-temperature strength; intergranular phase chemistry;
D O I
10.4028/www.scientific.net/KEM.287.299
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of glassy-phase, using AlN and Lu2O3 as sintering additives, on the microstructure and mechanical properties of liquid-phase-sintered, and subsequently annealed SiC ceramics was investigated. The microstructure was strongly influenced by the sintering additive composition, which determines the intergranular phase (IGP). The average thickness of SiC grains increased with increasing the Lu2O3 /(AlN + Lu2O3) ratio, whereas the average aspect ratio decreased with increasing the molar ratio. The homophase and heterophase boundaries of the SiC ceramics were completely crystalline in all specimens. The room temperature (RT) strength decreased with increasing the molar ratio whereas the RT toughness showed a minimum at the molar ratio of 0.6. The best results at RT were obtained when the molar ratio was 0.2. The flexural strength and fracture toughness of the ceramics were > 700 MPa and similar to 6 MPa.m(1/2) at RT. The high temperature strength was critically affected by the chemistry, especially the content of Al in the IGP. The best strength at temperatures >= 1500 degrees C was obtained when the molar ratio was 0.5. Flexural strengths of the ceramics at 1500 degrees C and 1600 degrees C were 610 80 MPa and 540 30 MPa, respectively. The beneficial effect of the new additive compositions (Lu2O3-AlN) on high-temperature strength of SiC ceramics was attributed to the crystallization or removal of IGP and introduction of Al into SiC, i.e., removal or reduction of Al content from the IGP, resulting in an improved refractoriness of the IGP.
引用
收藏
页码:299 / 310
页数:12
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