Shrinkage of grown-in defects in Czochralski silicon during thermal annealing in vacuum

被引：16

作者：

Ueki, T ^{[1
]}

Itsumi, M

Takeda, T

Yoshida, K

Takaoka, A

Nakajima, S

机构：

[1] NTT, Elect Corp, Atsugi, Kanagawa 2430198, Japan

[2] NTT, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan

[3] Osaka Univ, UHVEM, Res Ctr, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 7A期

关键词：

Czochralski silicon; grown-in defect; octahedral void; thermal annealing; TEM; UHVEM;

D O I：

10.1143/JJAP.37.L771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examined the effect of thermal annealing in vacuum on the behavior of dual-type octahedral void defects in Czochralski silicon. We found that the smaller void shrinks first at about 1100 degrees C and that during the Shrinkage of the smaller void to extinction, the bigger void maintains its structure and size. In addition, we found that shrinkage of the smaller void begins from the adjacent region between the two voids. We believe that the effect of minimizing the surface energy first takes place selectively in the smaller void and that after the extinction of the smaller void, the effect of minimizing the surface energy takes place in the bigger void.

引用

页码：L771 / L773

页数：3

共 12 条

[1]

ADACHI N, 1992, MATER RES SOC SYMP P, V262, P815, DOI 10.1557/PROC-262-815

[2] EQUILIBRIUM SHAPE OF SI [J].

EAGLESHAM, DJ ;

WHITE, AE ;

FELDMAN, LC ;

MORIYA, N ;

JACOBSON, DC .

PHYSICAL REVIEW LETTERS, 1993, 70 (11) :1643-1646

[3]

FURUMURA Y, 1996, P 2 INT S ADV SCI TE, P418

[4] THE COMPOSITION OF OCTAHEDRON STRUCTURES THAT ACT AS AN ORIGIN OF DEFECTS IN THERMAL SIO2 ON CZOCHRALSKI SILICON [J].

ITSUMI, M ;

AKIYA, H ;

UEKI, T ;

TOMITA, M ;

YAMAWAKI, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :5984-5988

[5]

MATSUSHITA Y, 1986, INT C SOL STAT DEV M, P529

[6]

MURANAKA M, 1997, INT C SOL STAT DEV M, P396

[7] Formation of grown-in defects during Czochralski silicon crystal growth [J].

Nishikawa, H ;

Tanaka, T ;

Yanase, Y ;

Hourai, M ;

Sano, M ;

Tsuya, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11) :6595-6600

[8]

TAKAOKA A, 1994, OYO BUTURI, V63, P382

[9] Octahedral void structure observed in grown-in defects in the bulk of standard Czochralski-Si for MOS LSIs [J].

Ueki, T ;

Itsumi, M ;

Takeda, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B) :1781-1785

[10]

UEKI T, 1996, INT C SOL STAT DEV M, P862

← 1 2 →