Optical properties of CdS0.2Se0.8:V

被引:1
作者
Goldstein, JT [1 ]
Ohmer, M
Hegde, SM
Pandey, R
Burger, A
Morgan, SH
Chen, KT
Chen, YF
机构
[1] USAF, Res Lab, MLPSO, Wright Patterson AFB, OH 45433 USA
[2] Michigan Technol Univ, Houghton, MI 49931 USA
[3] Fisk Univ, Dept Phys, Nashville, TN 37208 USA
关键词
CdSxSe1-x; vanadium; birefringence; phase matching;
D O I
10.1007/s11664-003-0071-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report here a comparison between two methods for calculating the index of refraction of the CdSxSe1-x alloy system and a calculation of the phase-matching angles for second harmonic generation for this system. Analytical expressions for the index and the birefringence of all x values are presented. The low-temperature photoluminescence spectrum has been measured and reveals a native defect at 1.45 eV and a peak at 1.8 eV caused by the vanadium dopant, as well as an exciton peak at 2.24 eV. The transmission spectrum displays three peaks due to the vanadium dopant at 0.979 eV, 1.087 eV, and 1.181 eV. The birefringence has been measured for x = 0.2 from 1 mum to 14 mum and varies from 0.0185 to 0.0125.
引用
收藏
页码:783 / 788
页数:6
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