The microstructure and state of stress of sn thin films after post-plating annealing:: An explanation for the suppression of whisker formation?

被引:17
作者
Sobiech, M. [1 ]
Welzel, U. [1 ]
Schuster, R. [3 ]
Mittemeijer, E. J. [1 ,3 ]
Huegel, W. [2 ]
Seekamp, A. [2 ]
Mueller, V [2 ]
机构
[1] Max Planck Inst Met Res, Heisenbergstr 3, D-70569 Stuttgart, Germany
[2] Robert Bosch GmbH, D-72762 Reutlingen, Germany
[3] Univ Stuttgart, Inst Phys Met, D-70569 Stuttgart, Germany
来源
57TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2007 PROCEEDINGS | 2007年
关键词
D O I
10.1109/ECTC.2007.373797
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The post-plating annealing ('post-bake' treatment, annealing at 150 degrees C for 1 h) of pure matte Sri thin films on Cubased substrates is known to be an effective whisker mitigation treatment. The microstructure and the stress state of Sri thin films on Cu-substrates produced with and without a 'post-bake' treatment have been investigated using scanning electron and focused ion beam microscopy (SEM & FIB), Xray photoelectron spectroscopy (XPS) and ageing time and depth-dependent X-ray diffraction (XRD) stress analyses. A comparison of the measured stress-depth gradients in t e near-surface regions of the Sri thin films produced with an without 'post-bake' treatment indicates differences that might provide a plausible explanation for the observed long-term resistance against whisker growth of Sn thin films subjected to a 'post-bake' treatment. In specimens subjected to a 'postbake' treatment, an almost depth-independent tensile stress state prevails in the surface region even after prolonged ageing.
引用
收藏
页码:192 / +
页数:3
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