Synthesis and photoluminescence of Si-related nanowires using porous silicon as Si element source

被引：12

作者：

Yang, Yajun ^{[1
,2
]}

Meng, Guowen ^{[1
,2
]}

Liu, Xianyun ^{[3
]}

Zhu, Xiaoguang ^{[1
,2
]}

Kong, Mingguang ^{[1
,2
]}

Han, Fangming ^{[1
,2
]}

Zhao, Xianglong ^{[1
,2
]}

Xu, Qiaoling ^{[1
,2
]}

Zhang, Lide ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China

[3] Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Lab Environm Spect, Hefei 230031, Peoples R China

来源：

CRYSTAL GROWTH & DESIGN | 2008年 / 8卷 / 06期

关键词：

D O I：

10.1021/cg800284u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Compound nanowires (NWs) of Si-related materials, such as SiC, Si3N4, and Zn2SiO4 have been synthesized in high yield via a simple thermal evaporation, chemical reaction, and deposition process using porous silicon as the Si element source. The vapor-solid growth mechanism of NWs plays a main role in the formation of the as-prepared Si-related NWs. Photoluminescence (PL) measurements reveal that SiC NWs emit an ultraviolet light at 364 nm, Si3N4 NWs shows a broad PL spectrum with a maximum at 495 nm, and Zn2SiO4 NWs reveals a green emission at about 510 nm. These Si-related NWs have potential in both composites and optoelectronic nanodevices.

引用

页码：1818 / 1822

页数：5

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