Structural and photoluminescence properties of Yb/Tm co-implanted ZnO crystals

被引：4

作者：

Li, Song ^{[1
]}

Song, Xiao-Xiao ^{[1
]}

Wang, Yao ^{[1
]}

Jia, Chuan-Lei ^{[1
]}

机构：

[1] China Univ Min & Technol, Sch Phys, Xuzhou 221116, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2017年 / 527卷

关键词：

Ion implantation; Rare-earth-doped materials; Photoluminescence; ZnO; UP-CONVERSION EMISSIONS; ELECTRICAL-PROPERTIES; ENERGY-TRANSFER; THIN-FILMS; NANOCRYSTALS; LUMINESCENCE; DEFECTS; IONS;

D O I：

10.1016/j.physb.2017.09.115

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnO virgin crystals were implanted with keV Yb and Tm ions at a total fluence of similar to 1015 ions/cm(2) at 600 degrees C. Thermal annealing was performed at 800 degrees C for 30 min in oxygen ambient. The effects of ion irradiation on the structural properties of the crystals were investigated using Rutherford backscattering/channeling and high-resolution X-ray diffraction technique. Near-infrared and upconversion luminescence emissions were demonstrated under excitation with 532 and 980 nm lasers, respectively. Results showed that the upconversion fluorescence spectra consisted of two emission peaks at around 484 and 673 nm, which were assigned to the Tm3+: (1)G(4) -> H-3(6) and Tm3+: (1)G(4) -> F-3(4) transitions, respectively.

引用

页码：57 / 60

页数：4

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