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Lattice distortion modified anisotropic magnetoresistance in epitaxial La0.67Sr0.33MnO3 thin films
被引:10
作者:
Gong, Junlu
[1
]
Zheng, Dongxing
[1
]
Li, Dong
[1
]
Jin, Chao
[1
]
Bai, Haili
[1
]
机构:
[1] Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Proc Techno, Tianjin 300350, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Lattice distortion;
La0.67Sr0.33MnO3;
films;
Anisotropic magnetoresistance;
MAGNETIC-ANISOTROPY;
COLOSSAL MAGNETORESISTANCE;
DEPENDENCE;
D O I:
10.1016/j.jallcom.2017.11.221
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Effects of lattice distortion on the anisotropic magnetoresistance (AMR) of magnetron sputtered epitaxial La0.67Sr0.33MnO3 (LSMO) thin films grown on (001)-oriented SrTiO3 and MgO substrates were investigated. Lattice mismatch at the film/substrate interface gives rise to weak and strong lattice distortion of the LSMO/SrTiO3 and LSMO/MgO films, respectively. The Jahn-Teller electron-phonon coupling in LSMO leads to significant localization of the e(g) electrons, causing smaller magnetization, lower transition temperatures (T-C, T-MI) and larger resistivity. Moreover, AMR of the LSMO films show strong correlations with the substrates. Only two-fold symmetric AMR can be observed in the LSMO/SrTiO3 films. However, the AMR curves of the LSMO/MgO system show clear transitions between two-and four-fold symmetry. This behavior is ascribed to the lattice distortion in the LSMO films which enhances the magnetocrystalline anisotropy. (C) 2017 Elsevier B.V. All rights reserved.
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页码:1152 / 1157
页数:6
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