Lattice distortion modified anisotropic magnetoresistance in epitaxial La0.67Sr0.33MnO3 thin films

被引:10
作者
Gong, Junlu [1 ]
Zheng, Dongxing [1 ]
Li, Dong [1 ]
Jin, Chao [1 ]
Bai, Haili [1 ]
机构
[1] Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Proc Techno, Tianjin 300350, Peoples R China
基金
中国国家自然科学基金;
关键词
Lattice distortion; La0.67Sr0.33MnO3; films; Anisotropic magnetoresistance; MAGNETIC-ANISOTROPY; COLOSSAL MAGNETORESISTANCE; DEPENDENCE;
D O I
10.1016/j.jallcom.2017.11.221
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Effects of lattice distortion on the anisotropic magnetoresistance (AMR) of magnetron sputtered epitaxial La0.67Sr0.33MnO3 (LSMO) thin films grown on (001)-oriented SrTiO3 and MgO substrates were investigated. Lattice mismatch at the film/substrate interface gives rise to weak and strong lattice distortion of the LSMO/SrTiO3 and LSMO/MgO films, respectively. The Jahn-Teller electron-phonon coupling in LSMO leads to significant localization of the e(g) electrons, causing smaller magnetization, lower transition temperatures (T-C, T-MI) and larger resistivity. Moreover, AMR of the LSMO films show strong correlations with the substrates. Only two-fold symmetric AMR can be observed in the LSMO/SrTiO3 films. However, the AMR curves of the LSMO/MgO system show clear transitions between two-and four-fold symmetry. This behavior is ascribed to the lattice distortion in the LSMO films which enhances the magnetocrystalline anisotropy. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:1152 / 1157
页数:6
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