Quantum transport in the surface states of epitaxial Bi(111) thin films

被引:14
|
作者
Zhu, Kai
Wu, Lin
Gong, Xinxin
Xiao, Shunhao
Jin, Xiaofeng [1 ]
机构
[1] Fudan Univ, Dept Phys, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
关键词
TOPOLOGICAL INSULATOR NANORIBBONS; DISORDERED CONDUCTORS; BISMUTH-FILMS; LOCALIZATION; MAGNETORESISTANCE;
D O I
10.1103/PhysRevB.94.121401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Although bulk Bi is a prototypical semimetal with a topologically trivial electronic band structure, we show by various quantum transport measurements that epitaxial Bi(111) thin films have unexpected and nontrivial properties. Not only the top and the bottom but also the side surfaces of epitaxial Bi(111) thin films are always robustly metallic while the interior has already become insulating. We identify the coupling between the top and the bottom surface states that drives the two originally independent surface conducting channels into a single connected one. The properties of Bi(111) thin films realized could lead to promising applications in spintronics.
引用
收藏
页数:6
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