Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling

被引：5

作者：

Babor, Petr ^{[1
]}

Duda, Radek ^{[1
]}

Prusa, Stanislav ^{[1
]}

Matlocha, Tomas ^{[1
]}

Kolibal, Miroslav ^{[1
]}

Cechal, Jan ^{[1
]}

Urbanek, Michal ^{[1
]}

Sikola, Tomas ^{[1
]}

机构：

[1] Brno Univ Technol, Inst Engn Phys, Fac Mech Engn, Brno 61669, Czech Republic

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2011年 / 269卷 / 03期

关键词：

DSIMS; TOF-LEIS; LEIS; Depth profiling; MoSi; HRTEM; ENERGY ION-SCATTERING; THIN-FILMS; BEAM ANALYSIS;

D O I：

10.1016/j.nimb.2010.11.087

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A combination of dynamic secondary ion mass spectroscopy (DSIMS) and time-of-flight low-energy ion scattering (TOF-LEIS) has been applied to acquire a composition depth profile of MoSi multilayers. During the sequential Ar+ sputtering secondary ions were monitored while in-between the sputtering cycles the TOF-LEIS spectra of scattered He neutrals were acquired. All the measured TOF-LEIS spectra versus sputtering time were displayed in one bitmap from which the depth profiles for different scattering depths were derived and analyzed. Analyzing the TOF-LEIS spectra of He particles scattered from the areas below the layer altered by ion-beam mixing led to an improvement of the depth resolution. In this way the resolution limits due to mixing phenomena can be overcome. Finally, the direct comparison of the DSIMS and TOF-LEIS depth profiles was carried out. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：369 / 373

页数：5

共 20 条

[1] Monolayer resolution in medium energy ion scattering [J].

Bailey, P ;

Noakes, TCQ ;

Baddeley, CJ ;

Tear, SP ;

Woodruff, DP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 183 (1-2) :62-72

[2] Surface composition analysis by low-energy ion scattering [J].

Brongersma, H. H. ;

Draxler, M. ;

de Ridder, M. ;

Bauer, P. .

SURFACE SCIENCE REPORTS, 2007, 62 (03) :63-109

[3] SAMPLING DEPTH OF TIME-OF-FLIGHT ION-SCATTERING - PRIMARY ION TYPE AND ENERGY-DEPENDENCE [J].

BU, H ;

SHI, M ;

RABALAIS, JW .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 61 (03) :337-342

[4] COMPARISON OF A TIME-OF-FLIGHT SYSTEM WITH AN ELECTROSTATIC ANALYZER IN LOW-ENERGY ION SCATTERING [J].

BUCK, TM ;

WHEATLEY, GH ;

MILLER, GL ;

ROBINSON, DAH ;

CHEN, YS .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :591-594

[5] Ion beam analysis with monolayer depth resolution [J].

Carstanjen, HD .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :1183-1190

[6] Diffusion and interaction studied nondestructively and in real-time with depth-resolved low energy ion spectroscopy [J].

de Rooij-Lohmann, V. I. T. A. ;

Kleyn, A. W. ;

Bijkerk, F. ;

Brongersma, H. H. ;

Yakshin, A. E. .

APPLIED PHYSICS LETTERS, 2009, 94 (06)

[7] Ion and neutral scattering spectra in LEIS [J].

Draxler, M ;

Zeppenfeld, P ;

Beikler, R ;

Taglauer, E ;

Bauer, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 232 :266-271

[8] Determination of in-depth density profiles of multilayer structures [J].

Kessels, MJH ;

Bijkerk, F ;

Tichelaar, FD ;

Verhoeven, J .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[9] TOF-LEIS analysis of ultra thin films:: Ga and Ga-N layer growth on Si(111) [J].

Kolíbal, M ;

Prusa, S ;

Bábor, P ;

Sikola, T .

SURFACE SCIENCE, 2004, 566 :885-889

[10] STUDY OF ION-BEAM INDUCED MIXING DURING SPUTTER DEPTH PROFILING OF THIN-FILMS BY LEIS [J].

PURANIK, SG ;

KING, BV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 34 (01) :102-112

← 1 2 →