Magnesium Doping Controlled Density and Mobility of Two-Dimensional Electron Gas in MgxZn1-xO/ZnO Heterostructures

被引：60

作者：

Falson, Joseph ^{[1
,2
]}

Maryenko, Denis ^{[3
]}

Kozuka, Yusuke ^{[1
,2
]}

Tsukazaki, Atsushi ^{[1
,2
,4
]}

Kawasaki, Masashi ^{[1
,2
,3
,5
,6
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, QPEC, Bunkyo Ku, Tokyo 1138656, Japan

[3] RIKEN, Adv Sci Inst, CERG, Wako, Saitama 3510198, Japan

[4] Japan Sci & Technol Agcy JST, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan

[5] Japan Sci & Technol Agcy JST, CREST, Chiyoda Ku, Tokyo 1020075, Japan

[6] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 09期

基金：

日本学术振兴会;

关键词：

QUANTUM; EPITAXY; ZNO;

D O I：

10.1143/APEX.4.091101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnesium content in MgxZn1-xO/ZnO heterostructures grown by molecular beam epitaxy enables the careful control of the carrier density of the two-dimensional electron system down to 5.6 x 10(10) cm(-2) while retaining a mobility of 200,000 cm(2) V-1 s(-1) when pursuing magnesium concentrations as low as x = 0.0038. By selecting an optimum magnesium content (x similar to 0.01), the mobility is enhanced to over 700,000 cm(2) V-1 s(-1) due to reduced impurity levels associated with the use of pure distilled ozone and avoiding interface roughness scattering. This control technique allows access to the coherent transport region with strong electron-electron interaction. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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