Highly Sensitive MoS2 Photodetector Based on Charge Integration and Field-Coupled Effect

this article, a highly sensitive molybde-num disulfide (MoS2) photodetector based on charge inte-gration and field-coupled effect has been designed and fabricated. The mechanism of field-coupled effect and the photoresponse properties of the devices have been demonstrated and evaluated. Due to the strong absorp-tion and photon-charges integration by deep-depletion region in a lightly doped silicon substrate, the strong field-coupled effect by few-layer MoS(2 )channel, and the effective carrier collection by monolayer graphene (Gr) electrode, the proposed MoS2-based photodetector exhibits an ultrahigh responsivity of 7.5 x 10(4) A/W and achieves a compromise between responsivity and response speed. The deep-depletion effect triggered by pulse gate voltage enables effective manipulation and high linearity. A com-parison with Gr channel shows the advantage of MoS2 pho-todetector in suppressing the reset current and reducing static power consumption to similar to 0.1 nW. This work provides a new route for improving the performance of TMDs-based photodetectors. disulfide (TMDCs), such the and thickness, to tunability effect conductance, trap-induced traps a