The effect of slurry film thickness variation in chemical mechanical polishing (CMP)

被引：0
|
作者：
Moon, Y [1 ]
Dornfeld, DA [1 ]
机构：
[1] Univ Calif Berkeley, Dept Mech Engn, Lab Mfg Automat, Berkeley, CA 94720 USA
来源：
PROCEEDINGS OF THE THIRTEENTH ANNUAL MEETING OF THE AMERICAN SOCIETY FOR PRECISION ENGINEERING | 1998年
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this research, it is shown that the CMP performance (material removal rate, planarization, surface roughness and defect density, etc.) is significantly determined by the slurry film thickness between the silicon wafer and the polishing pad. The slurry film thickness depends on velocity and Hersey number. Because of the dependence of material removal on the slurry film thickness and, thus, the wafer-pad contact mode, there exists a need to modify Preston's equation, a basic model used for CMP.
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页码：591 / 596
页数：4
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