Phosphorus doping and defect studies of diamnond-like carbon films by pulsed laser deposition using camphoric carbon target

被引:28
作者
Mominuzzaman, SM
Ebisu, H
Soga, T
Jimbo, T
Umeno, M
机构
[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Res Ctr Micro Struct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan
基金
日本学术振兴会;
关键词
diamond-like carbon; pulsed laser deposition; phosphorus doping; defect;
D O I
10.1016/S0925-9635(00)00542-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phosphorous is doped in diamond-like carbon (DLC) films by pulsed (XeCl) laser deposition technique using a camphoric carbon (CC) target, obtained from burning camphor (C10H16O), a natural source. The activation energy of undoped film is approximately 0.17 eV and increased to approximately 0.23 eV for the film deposited from the target containing 1% P. With a further increase of P content, the activation energy decreases to approximately 0.12 eV for the film deposited from the target containing 7% P. Study of activation energy reveals that the Fermi level of the carbon film moves from the valence band edge to near the conduction band edge through the mid-gap. The Tauc gap, conductivity, activation energy together with electron spin resonance (ESR) spectroscopic studies reveal successful doping of P in the films deposited from target containing up to 5% P upon modifications in the gap states. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:984 / 988
页数:5
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