Functionalized rGO Interlayers Improve the Fill Factor and Current Density in PbS QDs-Based Solar Cells

被引:6
作者
Babaev, Anton A. [1 ]
Parfenov, Peter S. [1 ]
Onishchuk, Dmitry A. [1 ]
Dubavik, Aliaksei [1 ]
Cherevkov, Sergei A. [1 ]
Rybin, Andrei V. [1 ]
Baranov, Mikhail A. [1 ]
Baranov, Alexander V. [1 ]
Litvin, Aleksandr P. [1 ]
Fedorov, Anatoly V. [1 ]
机构
[1] ITMO Univ, Ctr Informat Opt Technol, St Petersburg 197101, Russia
基金
俄罗斯科学基金会;
关键词
solar cells; reduced graphene oxide; quantum dots; impedance spectroscopy; CIRCUIT VOLTAGE DEFICIT; QUANTUM DOTS; GRAPHENE; PERFORMANCE; NANOCRYSTALS; STATES;
D O I
10.3390/ma12244221
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene-quantum dot nanocomposites attract significant attention for novel optoelectronic devices, such as ultrafast photodetectors and third-generation solar cells. Combining the remarkable optical properties of quantum dots (QDs) with the exceptional electrical properties of graphene derivatives opens a vast perspective for further growth in solar cell efficiency. Here, we applied (3-mercaptopropyl) trimethoxysilane functionalized reduced graphene oxide (f-rGO) to improve the QDs-based solar cell active layer. The different strategies of f-rGO embedding are explored. When f-rGO interlayers are inserted between PbS QD layers, the solar cells demonstrate a higher current density and a better fill factor. A combined study of the morphological and electrical parameters of the solar cells shows that the improved efficiency is associated with better layer homogeneity, lower trap-state densities, higher charge carrier concentrations, and the blocking of the minor charge carriers.
引用
收藏
页数:10
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