Strain-induced interface instability in GaN/AlN multiple quantum wells

被引：37

作者：

Nicolay, S. ^{[1
]}

Feltin, E.

Carlin, J.-F.

Grandjean, N.

Nevou, L.

Julien, F. H.

Schmidbauer, M.

Remmele, T.

Albrecht, M.

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[2] Univ Paris 11, CNRS, UMR 8622, OptoGaN Dept,Inst Elect Fondamentale, F-91405 Orsay, France

[3] Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期

关键词：

D O I：

10.1063/1.2769399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either AlN or GaN templates. The GaN/AlN interface is found to be unstable when pseudomorphically strained onto GaN, in agreement with theory. This effect deeply affects the quantum well potential profile leading to a strong redshift of the ISBT energies.

引用

页数：3

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