Strain-induced interface instability in GaN/AlN multiple quantum wells

被引：37
作者：
Nicolay, S. [1 ]
Feltin, E.
Carlin, J.-F.
Grandjean, N.
Nevou, L.
Julien, F. H.
Schmidbauer, M.
Remmele, T.
Albrecht, M.
机构：
[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland
[2] Univ Paris 11, CNRS, UMR 8622, OptoGaN Dept,Inst Elect Fondamentale, F-91405 Orsay, France
[3] Inst Kristallzuchtung, D-12489 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 06期
关键词：
D O I：
10.1063/1.2769399
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either AlN or GaN templates. The GaN/AlN interface is found to be unstable when pseudomorphically strained onto GaN, in agreement with theory. This effect deeply affects the quantum well potential profile leading to a strong redshift of the ISBT energies.
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页数：3
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共 18 条
  • [1] Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
    Ambacher, O
    Majewski, J
    Miskys, C
    Link, A
    Hermann, M
    Eickhoff, M
    Stutzmann, M
    Bernardini, F
    Fiorentini, V
    Tilak, V
    Schaff, B
    Eastman, LF
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) : 3399 - 3434
  • [2] Bastard G., 1988, WAVE MECH APPL SEMIC
  • [3] Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy
    Baumann, E.
    Giorgetta, F. R.
    Hofstetter, D.
    Golka, S.
    Schrenk, W.
    Strasser, G.
    Kirste, L.
    Nicolay, S.
    Feltin, E.
    Carlin, J. F.
    Grandjean, N.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (04)
  • [4] Macroscopic polarization and band offsets at nitride heterojunctions
    Bernardini, F
    Fiorentini, V
    [J]. PHYSICAL REVIEW B, 1998, 57 (16): : R9427 - R9430
  • [5] Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems
    Boguslawski, P
    Rapcewicz, K
    Bernholc, JJ
    [J]. PHYSICAL REVIEW B, 2000, 61 (16) : 10820 - 10826
  • [6] Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
    Gmachl, C
    Ng, HM
    Chu, SNG
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3722 - 3724
  • [7] Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures
    Heber, JD
    Gmachl, C
    Ng, HM
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1237 - 1239
  • [8] Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy
    Helman, A
    Tchernycheva, M
    Lusson, A
    Warde, E
    Julien, FH
    Moumanis, K
    Fishman, G
    Monroy, E
    Daudin, B
    Dang, DL
    Bellet-Amalric, E
    Jalabert, D
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (25) : 5196 - 5198
  • [9] Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
    Ibbetson, JP
    Fini, PT
    Ness, KD
    DenBaars, SP
    Speck, JS
    Mishra, UK
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (02) : 250 - 252
  • [10] Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
    Kishino, K
    Kikuchi, A
    Kanazawa, H
    Tachibana, T
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1234 - 1236
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