Chemical vapor deposition of thin graphite films of nanometer thickness

被引:427
作者
Obraztsov, A. N. [1 ]
Obraztsova, E. A.
Tyurnina, A. V.
Zolotukhin, A. A.
机构
[1] Moscow MV Lomonosov State Univ, R-119992 Moscow, Russia
[2] Univ Joensuu, FI-801101 Joensuu, Finland
关键词
D O I
10.1016/j.carbon.2007.05.028
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Well-ordered graphite films with a thickness of a few graphene layers have been grown on Ni substrates by chemical vapor deposition (CVD) from a mixture of hydrogen and methane activated by a DC discharge. According to Auger, Raman and scanning tunneling microscopy (STM) data the CVD graphite film thickness is about 1.5 +/- 0.5 nm. The graphene layers were perfectly adhered to the substrate surface except for upthrusted ridges of a few tens of nanometers in height. STM has revealed an atomically smooth surface with the atomic arrangement typical of graphite between the ridges. A difference in the thermal expansion coefficients of nickel and graphite is considered as a reason for the ridge formation. (c) 2007 Elsevier Ltd. All rights reserved.
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页码:2017 / 2021
页数:5
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