Surface Structure Study and Structure Determination of (√3 x √3)R 30° Phase of Si-adsorption on Ni(111) by LEED

被引：0
作者：
Rahman, Md. Sazzadur [1 ]
Kibria, Mohammad Tawheed [1 ]
Nakagawa, Takeshi [1 ]
Mizuno, Seigi [1 ]
机构：
[1] Kyushu Univ, Dept Mol & Mat Sci, Fukuoka, Japan
来源：
2015 4TH INTERNATIONAL CONFERENCE ON INFORMATICS, ELECTRONICS & VISION ICIEV 15 | 2015年
关键词：
Silicon; Ni(111); LEED; SCANNING-TUNNELING-MICROSCOPY; NI/SI(111) SYSTEM; ATOMIC STRUCTURES; RAY-DIFFRACTION; GROWTH; RECONSTRUCTION; SEGREGATION; COVERAGE; KINETICS; EPITAXY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The phase evolution of Si on Ni (111) was studied by LEED and AES. A new phase of Si on Ni (111) was found along with the previously reported (root 3 x root 3)R 30 degrees phase. The surface structure of (root 3 x root 3)R 30 degrees phase had determined, with chemical composition of Ni2Si, by using low-energy electron diffraction (LEED) analysis. The obtained nickel silicide would be helpful for understanding the formation of Schottky barrier at semiconductor-metal interface.
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页数：5
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