Ferroelectric properties of Sm-doped Bi4Ti3O12 thin films

被引：14
作者：
Chen, M [1 ]
Liu, ZL
Wang, Y
Yao, KL
机构：
[1] Huazhong Univ Sci & Technol, Dept Phys, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, State Key Lab Laser Technol, Wuhan 430074, Peoples R China
[3] Hunan Inst Sci & Technol, Dept Phys, Yueyang 414000, Peoples R China
[4] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 06期
关键词：
D O I：
10.1002/pssa.200420016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Sm-doped bismuth titanate and random oriented Bi-4,Sm,Ti3O12 (BST) thin films were fabricated on Pt/Ti/SiO2/Si substrates using a pulsed laser deposition method. The structures and the ferroelectric properties of the films were investigated. Sm doping leads to a marked improvement in the remanent polarization (P-r) and the coercive field (E-c). At an applied electric field of 100 kV/cm, P-r and E, of a BST (x = 0.8) film annealed at 650 degrees C are 20.5 mu C/cm(2) and 60 kV/cm, respectively. However, after 3 x 10 switching cycles, 20 % degradation of 2P, is observed in the film. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1166 / 1171
页数：6
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