Dependence of charge collection in thin-film CdTe solar cells on the absorber layer parameters

被引：4

作者：

Kosyachenko, L. A. ^{[1
]}

Grushko, E. V. ^{[1
]}

Savchuk, A. I. ^{[1
]}

机构：

[1] Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 02期

关键词：

D O I：

10.1088/0268-1242/23/2/025011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge collection efficiency in thin-film CdS/CdTe solar cells is discussed taking into consideration losses caused by a finite thickness of the p-CdTe layer, as well as recombination losses at the front and back surfaces. The dependences of the drift and diffusion components of the short-circuit current on the uncompensated acceptor concentration, charge carrier lifetime, recombination velocities at the CdS-CdTe interface and the back surface of the CdTe layer, as well as on its thickness, have been determined and discussed. It is shown that practically the total collection of charges generated by AM1.5 solar radiation, the uncompensated acceptor concentration, electron lifetime and thickness of the CdTe absorber layer should be equal to 10(15)-10(16) cm(-3), 10(-9)-10(-8) s and several tens of micrometres, respectively.

引用

页数：7

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