Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

被引：8

作者：

Lee, Gyeongyeop ^{[1
]}

Ha, Jonghyeon ^{[1
]}

Kim, Kihyun ^{[2
,3
]}

Bae, Hagyoul ^{[2
,3
]}

Kim, Chong-Eun ^{[4
]}

Kim, Jungsik ^{[1
]}

机构：

[1] Gyeongsang Natl Univ GNU, Dept Elect Engn, Jinju 52828, South Korea

[2] Jeonbuk Natl Univ, Div Elect Engn, Jeonju 54896, South Korea

[3] Jeonbuk Natl Univ, Future Semicond Convergence Technol Res Ctr, Jeonju 54896, South Korea

[4] Gyeongsang Natl Univ GNU, Dept Control & Instrumentat Engn, Jinju 52828, South Korea

来源：

MICROMACHINES | 2022年 / 13卷 / 06期

关键词：

displacement defect; radiation effect; SiC MOSFET; TCAD simulation; SINGLE-EVENT BURNOUT; POWER; PERFORMANCE; IMPACT;

D O I：

10.3390/mi13060901

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as variables. The transfer characteristics, breakdown voltage, and energy loss of a double-pulse switching test circuit are analyzed. Compared with the shallow defect energy level, the deepest defect energy level with E-C - 1.55 eV exhibits considerable degradation. The on-current decreases by 54% and on-resistance increases by 293% due to the displacement defect generated at the parasitic junction field-effect transistor (JFET) region next to the P-well. Due to the existence of a defect in the drift region, the breakdown voltage increased up to 21 V. In the double-pulse switching test, the impact of displacement defect on the power loss of SiC MOSFETs is negligible.

引用

页数：10

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