Analysis of Thermal Effects of Through Silicon Via in 3D IC using Infrared Microscopy

被引：0

作者：

Shin, Yoonhwan ^{[1
]}

Kim, Sarah Eunkyung ^{[2
]}

Kim, Sungdong ^{[1
]}

机构：

[1] Seoul Natl Univ Sci & Technol, Dept Mech Syst Design Engn, Seoul, South Korea

[2] Seoul Natl Univ Sci & Technol, Grad Sch NID Fus Technol, Seoul, South Korea

来源：

2015 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND 2015 IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE (IITC/MAM) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal management of 3D IC is an important factor in terms of performance and reliability. In this study, the feasibility of Cu TSV as a heat dissipation path was experimentally investigated. 40 mu m thick Si wafer was pointheated at 50 degrees C, 100 degrees C, 150 degrees C and 200 degrees C and surface temperature profile on the other side was observed using IR microscope. Specimens with TSV showed higher maximum temperature and larger hot area than ones without TSV above 100 degrees C, which implies TSV delivered the heat faster than Si bulk and can be used as a fast heat dissipation path. In a two tier stacked structure, the effect of TSV was not noticeable because of thick substrate wafer.

引用

页码：249 / 251

页数：3

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