Strongly enhanced electromechanical coupling in atomically thin transition metal dichalcogenides

被引：11
作者：
Haque, Md Farhadul [1 ]
Snapp, Peter [1 ]
Kim, Jin Myung [2 ]
Wang, Michael Cai [1 ,3 ]
Bae, Hyung Jong [1 ]
Cho, Chullhee [1 ]
Nam, SungWoo [1 ,2 ]
机构：
[1] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[3] Univ S Florida, Dept Mech Engn, Tampa, FL 33620 USA
来源：
MATERIALS TODAY | 2021年 / 47卷
关键词：
PIEZOELECTRIC NANOGENERATORS; PIEZORESPONSE; MOS2;
D O I：
10.1016/j.mattod.2020.12.021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Flexoelectricity in thin films has emerged as an effective electromechanical response owing to appealing scaling law and universal existence. However, current studies show limited out-of-plane converse flexoelectric effect (CFE) of ultra-thin transition metal dichalcogenides (TMDs) when compared to their conventional in-plane piezoresponse. Here, we report converse flexoresponse of atomically thin TMDs such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) which exceeds their intrinsic in-plane piezoresponses. Our piezoresponse force microscopy (PFM) measurements revealed strongly enhanced CFE of the atomically thin MoS2 and WSe2 than their bulk counterpart (similar to 700% enhancement in MoS2, similar to 400% enhancement in WSe2). We observed an anomalous reduction in converse flexoresponse in the monolayer structure attributed to a puckering deformation. By inducing a built-in in-plane tension to reduce puckering, we estimated the CFE of monolayer WSe2 to be 8.14 pm/V, the highest among the atomically thin TMDs.
引用
收藏
页码：69 / 74
页数：6
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