Epitaxial Cr on n-SrTiO3(001)-An ideal Ohmic contact

被引：17

作者：

Capan, C. ^{[1
,2
]}

Sun, G. Y. ^{[1
,3
]}

Bowden, M. E. ^{[1
]}

Chambers, S. A. ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Fundamental & Computat Sci Directorate, Richland, WA 99352 USA

[2] Washington State Univ, Dept Phys, Pullman, WA 99163 USA

[3] Nanjing Univ Sci & Technol, Dept Mat Sci & Engn, Nanjing, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期

关键词：

ELECTRONIC-STRUCTURE; 100; SRTIO3; FILMS; JUNCTIONS; CLUSTERS; GROWTH; METALS;

D O I：

10.1063/1.3680608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Cr metallizations grown on n-SrTiO3(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO2 layer, no reduction of the SrTiO3, and a near-perfect Ohmic contact. Cr/n-SrTiO3(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned. (C) 2012 American Institute of Physics. [doi:10.1063/1.3680608]

引用

页数：3