Epitaxial Cr on n-SrTiO3(001)-An ideal Ohmic contact

被引：17
作者：
Capan, C. [1 ,2 ]
Sun, G. Y. [1 ,3 ]
Bowden, M. E. [1 ]
Chambers, S. A. [1 ]
机构：
[1] Pacific NW Natl Lab, Fundamental & Computat Sci Directorate, Richland, WA 99352 USA
[2] Washington State Univ, Dept Phys, Pullman, WA 99163 USA
[3] Nanjing Univ Sci & Technol, Dept Mat Sci & Engn, Nanjing, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 05期
关键词：
ELECTRONIC-STRUCTURE; 100; SRTIO3; FILMS; JUNCTIONS; CLUSTERS; GROWTH; METALS;
D O I：
10.1063/1.3680608
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial Cr metallizations grown on n-SrTiO3(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO2 layer, no reduction of the SrTiO3, and a near-perfect Ohmic contact. Cr/n-SrTiO3(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned. (C) 2012 American Institute of Physics. [doi:10.1063/1.3680608]
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页数：3
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