Transmittance and cathodoluminescence of AlN ceramics sintered with Ca3Al2O6 as sintering additive

被引：13

作者：

Honma, Takayuki ^{[1
]}

Kuroki, Yuichiro ^{[1
]}

Okamoto, Tomoichiro ^{[1
]}

Takata, Masasuke ^{[1
]}

Kanechika, Yukihiro ^{[2
]}

Azuma, Masanobu ^{[2
]}

Taniguchi, Hitofumi ^{[3
]}

机构：

[1] Nagaoka Univ Technol, Dept Elect Engn, Niigata 9402188, Japan

[2] Tokuyama Corp, Adv Mat Dev Dept, Yamaguchi 7458648, Japan

[3] Tokuyama Corp, Tsukuba Res Lab, Ibaraki 3004247, Japan

来源：

CERAMICS INTERNATIONAL | 2008年 / 34卷 / 04期

关键词：

transmittance; cathodoluminescence; aluminum nitride; Ca3Al2O6;

D O I：

10.1016/j.ceramint.2007.09.062

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Aluminum nitride ceramics were prepared by sintering with 0 - 4.8 mass% of Ca3Al2O6 (C(3)A) as a sintering additive. The transmittance in the range of 260 - 550 nm increased with increasing amount of C(3)A. The cathodoluminescence intensity attributed to oxygen-induced defects decreased with increasing amount of C(3)A. From the results, the increase of the transmittance in the range of 260 - 550 nm was considered to be related to the decrease of the oxygen-induced defect density. (c) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：943 / 946

页数：4

共 17 条

[11] NONMETALLIC CRYSTALS WITH HIGH THERMAL-CONDUCTIVITY
SLACK, GA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (02) : 321 - 335
[12] Radiation induced recombination processes in AIN ceramics
Trinkler, L
Berzina, B
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (40) : 8931 - 8938
[13] Microstructural effects on the transmittance of translucent AlN ceramics by SPS
Xiong, Y
Fu, ZY
Wang, H
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 128 (1-3): : 7 - 10
[14] Microstructure and IR transmittance of spark plasma sintering translucent AlN ceramics with CaF2 additive
Xiong, Y
Fu, ZY
Wang, H
Wang, YC
Zhang, QJ
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 123 (01): : 57 - 62
[15] OPTICAL-PROPERTIES OF AIN EPITAXIAL THIN-FILMS IN THE VACUUM ULTRAVIOLET REGION
YAMASHITA, H
FUKUI, K
MISAWA, S
YOSHIDA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 896 - 898
[16] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
YIM, WM
STOFKO, EJ
ZANZUCCHI, PJ
PANKOVE, JI
ETTENBERG, M
GILBERT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 292 - 296
[17] LUMINESCENCE STUDIES OF OXYGEN-RELATED DEFECTS IN ALUMINUM NITRIDE
YOUNGMAN, RA
HARRIS, JH
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) : 3238 - 3246

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