Transport Through Magnetic Quantum Point Contacts

被引:0
|
作者
Day, Timothy E. [1 ]
Cummings, Aron W. [1 ]
Burke, Adam M. [1 ]
Ferry, David K. [1 ]
Goodnick, Stephen M. [1 ]
Reno, John L. [2 ]
机构
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Sandia Natl Labs, CINT Sci Dept, POB 5800, Albuquerque, NM 87185 USA
来源
2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2009年
关键词
AlGaAs/GaAs; quantum point contact; in-plane magnetic field; spintronics; 0.7-structure; cobalt; CONDUCTANCE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hybrid magnetic quantum point contacts were fabricated in the plane of a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied in-plane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the well-known spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions. In addition, a sharply magnetic field dependent washout of the conductance plateaus suggested evidence of a significant effect of the local fringe field on electron transport in the QPC region.
引用
收藏
页码:911 / 914
页数:4
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