Transport Through Magnetic Quantum Point Contacts

被引：0

作者：

Day, Timothy E. ^{[1
]}

Cummings, Aron W. ^{[1
]}

Burke, Adam M. ^{[1
]}

Ferry, David K. ^{[1
]}

Goodnick, Stephen M. ^{[1
]}

Reno, John L. ^{[2
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Sandia Natl Labs, CINT Sci Dept, POB 5800, Albuquerque, NM 87185 USA

来源：

2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2009年

关键词：

AlGaAs/GaAs; quantum point contact; in-plane magnetic field; spintronics; 0.7-structure; cobalt; CONDUCTANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hybrid magnetic quantum point contacts were fabricated in the plane of a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied in-plane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the well-known spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions. In addition, a sharply magnetic field dependent washout of the conductance plateaus suggested evidence of a significant effect of the local fringe field on electron transport in the QPC region.

引用

页码：911 / 914

页数：4

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