Strain compensated CdSe/ZnSe/ZnCdMgSe quantum wells as building blocks for near to mid-IR intersubband devices

被引：18

作者：

De Jesus, Joel ^{[1
,2
]}

Chen, Guopeng ^{[3
]}

Hernandez-Mainet, Luis C. ^{[2
,4
]}

Shen, Aidong ^{[3
]}

Tamargo, Maria C. ^{[2
,4
]}

机构：

[1] CUNY City Coll, Dept Phys, Grad Ctr, New York, NY 10031 USA

[2] CUNY City Coll, New York, NY 10031 USA

[3] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

[4] CUNY City Coll, Dept Chem, Grad Ctr, New York, NY 10031 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 425卷

关键词：

Molecular beam epitaxy; Quantum wells; Cadmium compounds; Zinc compounds; Semiconducting II-VI materials; RAY-DIFFRACTION MEASUREMENTS; LAYER SUPERLATTICES; INP; ABSORPTION;

D O I：

10.1016/j.jcrysgro.2014.12.021

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to increase the conduction band offset of the ZnCdMgSe-based material system we studied the incorporation of strained Cd/Se layers to obtain deeper quantum wells for shorter wavelength intersubband transitions than those obtained in lattice matched structures. Five CdSe/ZnSe/ZnCdMgSe multi quantum wells (QW) samples grown by molecular beam epitaxy are studied in detail by transmission electron microscopy (TEM), X-ray diffraction (XRD), cw-photoluminescence (PL), and Fourier Transform Infrared (FTIR) absorption experiments. TEM and XRD results confirmed good structural quality of the samples. All the multi-QW PL energies were below the ZnCdSe lattice matched to InP alloy bandgap (2.1 eV), which serves as first evidence of having achieved deeper quantum wells. FM absorptions from 3.83 to 2.56 mu m were measured, shorter than those achieved by the lattice matched system. Simulations based on these results predict that absorptions as low as 2.18 mu m can be obtained with these materials. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：207 / 211

页数：5

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