Migration of grain boundaries in free-standing nanocrystalline thin films

被引：9
|
作者：
Dynkin, N. K. [2 ]
Gutkin, M. Yu [1 ,2 ,3 ]
机构：
[1] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia
[2] St Petersburg State Polytech Univ, Dept Phys Mat Strength & Plast, St Petersburg 195251, Russia
[3] St Petersburg State Univ, Dept Theory Elast, St Petersburg 198504, Russia
来源：
SCRIPTA MATERIALIA | 2012年 / 66卷 / 02期
关键词：
Grain boundary migration; Grain growth; Nanocrystalline materials; Thin films; Disclinations; PLASTIC-DEFORMATION; ROOM-TEMPERATURE; GROWTH; AL; NANOINDENTATION; ALUMINUM; DYNAMICS; BEHAVIOR; METALS; COPPER;
D O I：
10.1016/j.scriptamat.2011.09.043
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Theoretical models are suggested which describe stress-coupled migration of grain boundaries in free-standing nanocrystalline films under external loading. The critical stresses for the start of migration and the transition from stable to unstable migration are calculated and analyzed with respect to the grain size, grain boundary misorientation angle, film thickness, distance from the closest free surface, and migration direction. It is shown that the least stable are low-angle grain boundaries of larger length, which emerge on the surfaces of the thinnest films. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：73 / 76
页数：4
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