Magnetic investigations of Cd1-xZnxTe (x=0.12, 0.21) wide-gap semiconductors

被引：7
作者：
Shaldin, YV
Warchulska, I
Rabadanov, MK
Komar', VK
机构：
[1] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 117333, Russia
[2] Int Lab High Magnet Fields & Low Temp, PL-53421 Wroclaw, Poland
[3] Natl Acad Sci Ukraine, NTK Inst Single Crystals, UA-61001 Kharkov, Ukraine
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 03期
关键词：
D O I：
10.1134/1.1682329
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of measuring the magnetization M and magnetic susceptibility chi of Cd1 - xZnxTe crystals are presented. The hysteresis of the M(H) dependence, which is caused by the presence of arbitrarily oriented magnetic clusters, is observed in magnetic fields H < 2 kOe. Van Vlek paramagnetism, which is caused by electric fields of defects, makes a substantial contribution to the magnetic susceptibility. The anomalies in the chi(T) dependence in the temperature region T < 50 K are associated with variation in the charge state of interstitial Te for x = 0.12. For x = 0.21, these anomalies can be caused either by the paramagnetism of noninteracting defects or by antiferromagnetic ordering of the defect subsystem formed by Zn-Cd and Te-i. The effect of annealing on the magnetic state of a defect subsystem in the samples is ascertained. (C) 2004 MAIK "Nauka/Interperiodica".
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页码：288 / 292
页数：5
相关论文
共 16 条
  • [1] FERROELECTRIC PROPERTIES OF CD1-XZNX TE SOLID-SOLUTIONS
    BENGUIGUI, L
    WEIL, R
    MURANEVICH, E
    CHACK, A
    FREDJ, E
    ZUNGER, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 513 - 520
  • [2] GEORGOBIANI AN, 1986, PHYSICS 2 6 COMPOUND, P72
  • [3] IVANCHUK RD, 1977, SOV PHYS SEMICOND+, V11, P1202
  • [4] MAGNETISM OF CDTE LATTICE DEFECTS
    IVANOVOMSKII, VI
    RUD, YV
    TSMOTS, VM
    OGORODNIKOV, VK
    KOLOMIETS, BT
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (01): : 61 - +
  • [5] Komar V.V, 2002, POVERKHNOST, P94
  • [6] Kroger F. A., 1964, CHEM IMPERFECT CRYST
  • [7] IV group dopant compensation effect in CdTe
    Panchuk, O
    Savitskiy, A
    Fochuk, P
    Nykonyuk, Y
    Parfenyuk, O
    Shcherbak, L
    Ilashchuk, M
    Yatsunyk, L
    Feychuk, P
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 197 (03) : 607 - 611
  • [8] SYMMETRY PROPERTIES OF THE ENERGY BANDS OF THE ZINC BLENDE STRUCTURE
    PARMENTER, RH
    [J]. PHYSICAL REVIEW, 1955, 100 (02): : 573 - 579
  • [9] SHALDIN YV, 2002, P 5 INT WORKSH MAGN, P98
  • [10] SHALDIN YV, 2001, IAN SSSR NEORG MATER, V37, P671
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