A dual-wavelength source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD

被引：20

作者：

Osowski, ML

Lammert, RM

Coleman, JJ

机构：

[1] Microelectronics Laboratory, Univ. Illinois at Urbana-Champaign, Urbana

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 02期

基金：

美国国家科学基金会;

关键词：

quantum-confined Stark effect; quantum-well lasers; semiconductor lasers; waveguide couplers; wavelength division multiplexing;

D O I：

10.1109/68.553073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three-step selective-area metal-organic chemical vapor deposition (MOCVD) is used to fabricate a dual wavelength source with integrated electroabsorption modulators and a passive y-junction coupler. Threshold current values of 9.5 and 10.1 mA are obtained for two distinct wavelength sources operating continuous-wave (CW) coupled into the same output waveguide.

引用

页码：158 / 160

页数：3

共 2 条

[1] Dual-wavelength laser source monolithically integrated with Y-junction coupler and isolator using quantum-well intermixing
Teng, JH
Chua, SJ
Zhang, ZH
Huang, YH
Huang, YH
Li, G
Wang, ZJ
IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (10) : 1310 - 1312
[2] Monolithic integration of MQW wavelength tunable DBR lasers with external cavity electroabsorption modulators by selective-area MOCVD
Lammert, RM
Smith, GM
Hughes, JS
Osowski, ML
Jones, AM
Coleman, JJ
EMERGING COMPONENTS AND TECHNOLOGIES FOR ALL-OPTICAL PHOTONIC SYSTEMS II, 1997, 2918 : 155 - 165

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