GaPAsN-based light-emitting diode on silicon

被引：2
|
作者：
Lazarenko, Alexandra A. [1 ]
Nikitina, Ekaterina, V [1 ]
Gudovskikh, Alexander S. [1 ]
Baranov, Artem, I [1 ]
Sobolev, Maxim S. [1 ]
Pirogov, Evgeny, V [1 ]
Egorov, Anton Yu [1 ,2 ]
机构：
[1] St Petersburg Natl Res Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia
[2] ITMO Univ, St Petersburg 197101, Russia
来源：
OPTICS AND LASER TECHNOLOGY | 2020年 / 129卷 / 129期
关键词：
SI; LASERS;
D O I：
10.1016/j.optlastec.2020.106308
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
This paper describes the design and the stages of development of a light-emitting diode (LED) based on dilute nitride semiconductors on a silicon substrate. Current-voltage characteristics and electroluminescence spectra were obtained for the LED structure. The LED demonstrates intensive electroluminescence at a wavelength of 645 nm up to the temperature of 360 K. Besides, the resulting LED structure has a good temperature stability of the emission wavelength and a high breakdown voltage of similar to-40 V.
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页数：5
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