Bismuth;
Electrodeposition;
Resistivity;
Low temperature detectors;
LARGE MAGNETORESISTANCE;
MAGNETOTRANSPORT PROPERTIES;
NANOWIRE ARRAYS;
THIN-FILMS;
BISMUTH;
OXIDE;
MORPHOLOGIES;
TRANSITION;
PROGRESS;
SENSOR;
D O I:
10.1016/j.jelechem.2018.10.041
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
The semimetal character of bismuth and its large photon absorbing power make of this element the most suitable absorber material for X-ray low temperature detectors. This application requires coatings of Bi with thicknesses and properties that only electrodeposition methods may achieve. Although there are studies on electrodeposition of bismuth for these detectors and other devices, the process is not straightforward and has not been sufficiently studied in terms of the desired final properties, neither the effect of different parameters is well known or easily reproduced. This work reports the influence of two different electrolytes, of the deposition method, and of heating and stirring on the structure, microstructure and transport properties of bismuth films. Typically, rhombohedral Bi is obtained upon electrodeposition with very good crystallinity, and some crystal preferential orientation, while significant empirical correlations are found among electrochemical parameters, microstructure, and resistivity. Such correlation allows the identification of the deposition parameters for coatings that yield the optimal functional properties.
机构:
Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
Intel Corp, Santa Clara, CA 95051 USAUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Vutukuri, Sreenivasulu
Schad, Rainer
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机构:
Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Schad, Rainer
LeClair, Patrick
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机构:
Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USAUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
LeClair, Patrick
Zangari, Giovanni
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机构:
Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
Univ Virginia, Ctr Electrochem Sci & Engn, Charlottesville, VA 22904 USAUniv Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
机构:
Kaunas Univ Technol, Dept Phys, Studentu Str 50, LT-51368 Kaunas, LithuaniaKaunas Univ Technol, Dept Phys, Studentu Str 50, LT-51368 Kaunas, Lithuania
Sriubas, Mantas
Pamakstys, Kastytis
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Kaunas Univ Technol, Dept Phys, Studentu Str 50, LT-51368 Kaunas, LithuaniaKaunas Univ Technol, Dept Phys, Studentu Str 50, LT-51368 Kaunas, Lithuania
Pamakstys, Kastytis
Laukaitis, Giedrius
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机构:
Kaunas Univ Technol, Dept Phys, Studentu Str 50, LT-51368 Kaunas, LithuaniaKaunas Univ Technol, Dept Phys, Studentu Str 50, LT-51368 Kaunas, Lithuania
机构:
King Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi ArabiaKing Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia
Khan, M. A. Majeed
Kumar, Sushil
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机构:
Chaudhary Devi Lal Univ, Dept Phys, Sirsa 125055, IndiaKing Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia
Kumar, Sushil
Khan, M. Wasi
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机构:
King Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi ArabiaKing Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia
Khan, M. Wasi
Husain, M.
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机构:
Jamia Millia Islamia, Dept Phys, New Delhi 110025, IndiaKing Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia
Husain, M.
Zulfequar, M.
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机构:
Jamia Millia Islamia, Dept Phys, New Delhi 110025, IndiaKing Saud Univ, King Abdullah Inst Nanotechnol, Riyadh 11451, Saudi Arabia