Microstructure and electrical transport in electrodeposited Bi films

被引:8
|
作者
Moral-Vico, J. [1 ]
Casan-Pastor, N. [1 ]
Camon, A. [2 ]
Pobes, C. [2 ]
Jaudenes, R. M. [2 ]
Strichovanec, P. [2 ]
Fabrega, L. [1 ]
机构
[1] CSIC, ICMAB, Campus UAB, E-08193 Barcelona, Spain
[2] Univ Zaragoza, CSIC, ICMA, Pedro Cerbuna 12, E-50009 Zaragoza, Spain
关键词
Bismuth; Electrodeposition; Resistivity; Low temperature detectors; LARGE MAGNETORESISTANCE; MAGNETOTRANSPORT PROPERTIES; NANOWIRE ARRAYS; THIN-FILMS; BISMUTH; OXIDE; MORPHOLOGIES; TRANSITION; PROGRESS; SENSOR;
D O I
10.1016/j.jelechem.2018.10.041
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The semimetal character of bismuth and its large photon absorbing power make of this element the most suitable absorber material for X-ray low temperature detectors. This application requires coatings of Bi with thicknesses and properties that only electrodeposition methods may achieve. Although there are studies on electrodeposition of bismuth for these detectors and other devices, the process is not straightforward and has not been sufficiently studied in terms of the desired final properties, neither the effect of different parameters is well known or easily reproduced. This work reports the influence of two different electrolytes, of the deposition method, and of heating and stirring on the structure, microstructure and transport properties of bismuth films. Typically, rhombohedral Bi is obtained upon electrodeposition with very good crystallinity, and some crystal preferential orientation, while significant empirical correlations are found among electrochemical parameters, microstructure, and resistivity. Such correlation allows the identification of the deposition parameters for coatings that yield the optimal functional properties.
引用
收藏
页码:40 / 47
页数:8
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