Photoluminescence of silicon nitride-embedded silicon nanocrystallites prepared by thermal annealing of Si-rich silicon nitride

被引：0

作者：

Wong, C. K. ^{[1
]}

Wong, H. ^{[1
]}

Kok, C. W. ^{[1
]}

Chan, M. ^{[2
]}

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Tat Chee Ave, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS | 2007年

关键词：

silicon-rich silicon nitride; silicon nanocrystallites; phase separation; photoluminescence;

D O I：

10.1109/EDSSC.2007.4450096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon nanocrystallites embedded in silicon nitride were prepared by high-temperature annealing of silicon-rich silicon nitride (SRN) via the phase separation reaction. Chemical composition and bonding structures of the SRN were explored using X-ray photoelectron spectroscopy (XPS). Raman spectroscopy and photoluminescence (PL) measurements were also conducted to probe the luminescent properties of the SRN films. We found that the intensities and the energy locations of the SRN films depend strongly on both the deposition and annealing conditions. High-temperature (similar to 900 degrees C) annealing of as-deposited SRN gives rise to a strong PL because of the formation of denser crystalline Si phases as a result of phase separation of the SRN films.

引用

页码：197 / +

页数：2

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