Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films

被引：29

作者：

Alibart, F. ^{[1
]}

Drouhin, O. Durand ^{[1
]}

Debiemme-Chouvy, C. ^{[2
]}

Benlahsen, M. ^{[1
]}

机构：

[1] Fac Sci Amiens, Phys Mat Condensee Lab, F-80039 Amiens 2, France

[2] Univ Paris 06, CNRS LISE, UPR 15, F-75252 Paris 5, France

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 145卷 / 7-8期

关键词：

thin film; dielectric response; electronic transport; electronic states (localized);

D O I：

10.1016/j.ssc.2007.11.025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Amorphous carbon nitride films (CNx) were grown by reactive radio-frequency (RF) magnetron sputtering of a high-purity graphite target in argon/nitrogen (Ar/N-2) gas mixture. The total discharge pressure was 1 Pa and the total nitrogen partial pressure (NPP) in plasma was between 0 and 0.10%. The properties of films were determined using X-ray photoelectron spectroscopy (XPS), infrared absorption, and transmission spectroscopy. The electrical resistivity of films was studied as a function of temperature between 110 and 573 K. The optical gap varies from 0.30 to 0.7 eV in the range of the studied N content in good agreement with the resistivity measurements. The two types of conduction mechanisms can be interpreted basis on the band structure model of the pi electrons in a disordered carbon with the presence of localized states. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：392 / 396

页数：5

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