Atomic layer deposition of quaternary oxide (La,Sr)CoO3-δ thin films

被引：32

作者：

Ahvenniemi, E. ^{[1
]}

Matvejeff, M. ^{[1
]}

Karppinen, M. ^{[1
]}

机构：

[1] Aalto Univ, Dept Chem, Inorgan Chem Lab, FI-00076 Espoo, Finland

来源：

DALTON TRANSACTIONS | 2015年 / 44卷 / 17期

关键词：

THERMOELECTRIC PROPERTIES; BETA-DIKETONATE; FUEL-CELLS; CONDUCTIVITY; TEMPERATURE; CATHODES; GROWTH;

D O I：

10.1039/c5dt00436e

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A novel atomic layer deposition (ALD) process was developed for fabricating quaternary cobalt oxide (La1-xSrx)CoO3-delta thin films having the eye on future applications of such films in e.g. solid oxide fuel cell cathodes, oxygen separation membranes or thermocouples. The deposition parameters and the conditions of a subsequent annealing step were systematically investigated, and using the thus optimized parameters the cation stoichiometry in the films could be accurately tuned. The most detailed study was conducted for x = 0.7, i.e. the composition with the highest application potential within the (La1-xSrx)CoO3-delta system.

引用

页码：8001 / 8006

页数：6

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