Structural defects in pristine and Mn-doped monolayer WS2: A first-principles study

被引：38
作者：
Zhao, Xu [1 ]
Dai, Xianqi [1 ,2 ]
Xia, Congxin [1 ]
Wang, Tianxing [1 ]
机构：
[1] Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Henan, Peoples R China
[2] Zhengzhou Normal Univ, Dept Phys, Zhengzhou 450044, Henan, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 85卷
基金：
中国国家自然科学基金;
关键词：
Vacancy defects; Monolayer WS2; First-principles; MAGNETIC-PROPERTIES; THIN-FILMS; MOS2; NANOSTRUCTURES; SEMICONDUCTORS; NANORIBBONS; TRANSISTORS; STRAIN;
D O I：
10.1016/j.spmi.2015.06.007
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate electronic and magnetic properties of pristine and Mn-doped monolayer WS2 with vacancy defects using the first-principles methods based on density functional theory. The results show that intrinsic three-tungsten vacancy (V-3W), six-sulfur vacancy (V-6S) and 1W+2S vacancy (V1W+2S) can induce to total spin magnetic moment of 0.169 mu(B), 0.608 mu(B) and 0.981 mu(B), respectively, One and two sulfurs vacancy show spin magnetic moment up to 1.048 mu(B) and 1.172 mu(B) in Mn-doped monolayer WS2. Sulfur vacancy defects (V-1S and V-2S) can induce to the increase of the total magnetic moment in Mn-doped monolayerWS(2) system. Several of the W atoms in the immediate vicinity of the Mn atom display antiferromagnetic coupling to the dopant with the increase of sulfur vacancy defects. This finding indicates an immediate significance of pristine and Mn-doped 1L WS2 with vacancy defects for new spintronic applications. (C) 2015 Elsevier Ltd. All rights reserved.
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收藏
页码：339 / 347
页数：9
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